Table of Contents
What is a parasitic diode?
As a consequence of the MOSFET structure, the body diode is formed by the pn junction between the source and drain, and is also called a parasitic diode or an internal diode. The performance of the body diode is one important parameter of the MOSFET, and is important when using the MOSFET in an application.
How many parasitic BJT will form in CMOS?
Inside a CMOS (Complementary Metal Oxide Semiconductor) circuit, two parasitic BJT (Bipolar Junction Transistors) get formed and connected in such a way that these BJT form a PNPN device or SCR (Silicon-Controlled Rectifier) or Thyristor. Formation of the PNPN device is shown in the figure below.
What are BJTS used for?
As with all transistors, the basic function of a BJT is typically to function as a switch or to amplify, filter, and rectify power. Bipolar transistors are current-controlled and operated devices, meaning that a much smaller base current causes a larger current to flow from emitter to collector.
Is CMOS a BJT?
difference between bjt and mosfet CMOS (Complementary MOS) is not a type of transistor. It is a topology that consists of an N channel MOSFET and a P channel MOSFET. An N Channel enhancement mode MOSFET turns on when a positive voltage is applied to its gate with respect to its source.
What is meant by parasitic capacitance?
From Wikipedia, the free encyclopedia. Parasitic capacitance, or stray capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other.
What is the difference between BJT and diode?
The diode is a semiconductor device which allows the current to flow only in one direction, whereas the transistor transfers the resistance from the low resistance region to high resistance region. The BJT uses both the electrons and hole as a charge carrier, and the FET is a unipolar transistor.
How do I stop latching up?
There are several ways to reduce the possibility of latchup: Reduce the beta of either or both parasitic devices. In practice this can be achieved by increasing the spacing between the devices, which increases the width of the lateral device. However, such increased spacing reduces packing density.
What is latch-up VLSI?
VLSI Design. Latch-up is defined as the generation of a low-impedance path in CMOS chips between the power supply (VDD) and the ground (GND) due to the interaction of parasitic PNP and NPN bipolar junction transistors (BJTs).