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What is the effect of temperature on depletion layer?

Posted on March 15, 2020 by Author

Table of Contents

  • 1 What is the effect of temperature on depletion layer?
  • 2 How the width of the depletion region increases in the pn junction diode?
  • 3 What is the formation of the depletion layer in a diode?
  • 4 What is depletion layer in PN junction?

What is the effect of temperature on depletion layer?

as drift current increases due to temperature a lesser potential is required to maintain the same drift current which cancels the diffusion current. Hence , the depletion layer decreases it’s width.

What is the effect of temperature on the width of depletion region?

If the depletion region width shrinks as temperature increases its because the density of carriers is increasing. The applied voltage determines the amount of charge stored in the junction.

What is the effect of temperature on barrier potential?

Barrier potential is inversely proportional to the temperature. Higher the temperature, greater will be the mobility of charge carriers and lower potential difference across the junction can break the potential barrier.

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How the width of the depletion region increases in the pn junction diode?

when we apply a negative voltage to the diode i.e. a positive terminal is connected towards the N-type and the negative terminal is towards the P-type, the junction width, or the width of the depletion layer is increased. So, the width of the depletion region in a P-N junction diode is increased by reverse bias.

When the temperature increases what happens to the barrier potential?

Does potential barrier depend on temperature?

The barrier potential is directly proportional to width of the depletion region. Since the barrier potential depends on the width of the depletion region, the barrier potential depends on temperature, forward bias and the doping density of the diode.

What is the formation of the depletion layer in a diode?

Formation of Depletion Layer in Diode. There is greater concentration of holes in P-region and electrons in N-region. This difference in concentration establishes a density mismatch across the junction resulting in majority carrier diffusion Holes diffuse from P to N and electrons from N to P regions causing the recombination.

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What happens when a diode is placed in reverse bias?

When the diode is in reverse bias majority carrier are block and only a small current due to minority current flows through the diode. As the reverse voltage is increase from zero the reverse current very quickly reaches its maximum or saturation value I o which is known as leakage.

What is depletion layer and potential barrier?

This recombination of electrons and holes produces a narrow region at junction called depletion layer. Potential Barrier As the depletion layer built up a different of potential appears across the junction this difference of potential at junction is called potential barrier.

What is depletion layer in PN junction?

Formation of Depletion Layer In PN Junction. This recombination of electrons and holes produces a narrow region at junction called depletion layer. As the depletion layer built up a different of potential appears across the junction this difference of potential at junction is called potential barrier.

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