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What is the effect of temperature on pn junction?

Posted on June 19, 2021 by Author

Table of Contents

  • 1 What is the effect of temperature on pn junction?
  • 2 What is the effect of temperature in diode?
  • 3 How much heat does it take to overcome a potential barrier?
  • 4 What is the barrier potential of a p-n junction?

What is the effect of temperature on pn junction?

Therefore, the increase in temperature due to heating decreases both the forward resistance and reverse resistance, and in comparison, increases the instantaneous diode current, which means that heating changes the entire V−I characteristics of a p-n junction diode.

What is the effect of temperature in diode?

Rise in temperature generates more electron-hole pair thus conductivity increases and thus increase in current Increase in reverse saturation current with temperature offsets the effect of rise in temperature Reverse saturation current (IS) of diode increases with increase in the temperature the rise is 7\%/ºC for both …

Does built in potential increase with temperature?

So temperature has no effect on Vbi (built-in potential). From equation (1) we can also say that by increasing the doping concentration of P and n sides, the built-in potential of the diode increases slightly only as it depends logarithmically on doping concentration.

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What is the relationship between barrier potential and temperature?

This equation shows that the barrier potential is directly proportional to the temperature. So as temperature increases the barrier potential should increase. ” With increase in temperature, more minority charge carriers are produced, leading to their increased drift across the junction.

How much heat does it take to overcome a potential barrier?

Again no amount of heating can cause a semiconductor to overcome its potential barrier. Too much heat will simply destroy the semiconductor. But when connected to a proper ckt and proper biasing is done then the current flowing through the diode will depend on the supply and the temperature.

What is the barrier potential of a p-n junction?

The barrier potential of germanium is approximately 0.3 V, and of silicon is 0.7 V. These values cannot be measured directly and appears across the space charge region of the junction. In order to produce current conduction, the barrier potential of a P-N junction must be overcome by an external voltage source.

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How does temperature affect the voltage at the junction?

Yes, that is true. ” With increase in temperature, more minority charge carriers are produced, leading to their increased drift across the junction. As a result, equilibrium occurs at a lower barrier potential. It is found that the Vb decreases by about 2 mV/deegre celcius.

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