Table of Contents
Why BJT is bipolar and MOSFET is unipolar?
BJT is called bipolar because the current in a BJT flows due to both electron and hole carriers, whereas the current in a Field Effect Transistor (FET) flows due to either electron carriers for N-type FET or hole carriers for P-type FET, hence they’re called unipolar transistors.
How power BJT characteristic differs from its signal counterpart?
It has been used at signal level power for a long time. However, the construction and operating characteristics of a Power BJT differs significantly from its signal level counterpart due to the requirement for a large blocking voltage in the “OFF” state and a high current carrying capacity in the “ON” state.
Why Mosfet’s are preferred over BJT for parallel operation?
Mosfet provides very good isolation between Gate and other two terminals as compared to BJT. Mosfet can handle more power as compared to BJT. Mosfet has very low switiching power loss and high speed. Voltage signals can easily operate a MOSFET hence it is used in many digital circuits.
What are the advantages of BJT over MOSFET and why?
BJTs operate better in high load conditions&with higher frequencies as compared with MOSFETS
What is the difference between MOSFET and BJT?
The BJT is a bipolar junction transistor whereas MOSFET is a metal oxide semiconductor field effect transistor. BJT’s are used for low current applications, whereas MOSFET is used for high power applications. The BJT is a current controlled device and MOSFET is a voltage controlled device.
Which is better switch BJT or FET?
Therefore, the gain of the BJT amplifier is very high as compared to FET. Since the current flow is due to electrons as well as holes, the recovery time i.e. the time it takes to switch off and switch on is large as compared to FET. Therefore, the BJT has a low switching speed as compared to FET. BJT is not suitable for very high frequency.
What’s the difference between MOS and BJT?
BJT is a Bipolar Junction Transistor,while MOSFET is a Metal Oxide Semiconductor Field-Effect Transistor.